DBPapers

STABILIZATION OF POROUS SILICON LUMINESCENCE WITH SURFACE MODIFICATIONS

AUTHOR/S: E. KAYAHAN, O. GUNDOGDU, E. SIMOOGLU, M. H. ASLAN, A. Y. ORAL
Sunday 1 August 2010 by Libadmin2010

10th International Multidisciplinary Scientific GeoConference - SGEM2010, www.sgem.org, SGEM2010 Conference Proceedings/ ISBN 10: 954-91818-1-2, June 20-26, 2010, Vol. 1, 1167-1172 pp

ABSTRACT

In this study, enhancement and stabilization of photoluminescence (PL) by porous
silicon (PS) were investigated. The PS samples were metallized in solutions containing
3 mM NaNO3 metal salt using immersing plating method. The surface bond
configuration of PS was monitored by Fourier Transmission Infrared Spectroscopy
(FTIR) and it was found that the PS surface was oxidized after the metallization. The PL
intensity increased after certain critical immersion times and PL spectrum shifted
towards the high energy region after the metallization. PL intensity of metalized PS
samples was more stable than as-anodized PS sample. The experimental results
suggested the possibility that oxygen and/or metal passivation (i.e. Na) of PS surface
could be the most suitable way for to obtain efficient and stabilized PL.

Keywords: Porous silicon, luminescence stabilization, FTIR of PS