DBPapers
DOI: 10.5593/SGEM2014/B62/S26.048

THE FORMATION OF THE MICROSTRUCTURE OF THE MULTISILICON GROWN FROM REFINED METALLURGICAL SILICON

S. Pescherova, L. Pavlova, A. Nepomnyashchikh
Wednesday 1 October 2014 by Libadmin2014

References: 14th International Multidisciplinary Scientific GeoConference SGEM 2014, www.sgem.org, SGEM2014 Conference Proceedings, ISBN 978-619-7105-21-6 / ISSN 1314-2704, June 19-25, 2014, Book 6, Vol. 2, 371-378 pp

ABSTRACT
Distribution of impurities in multisilicon, grown from metallurgical silicon by the
Bridgmen-Stockbarger method has been studied using electron probe microanalysis. It has been found that most of the impurities occur as primary and secondary
microinclusions. Primary microinclusions are large (1-100 micron) intermetallic
agglomerates formed in the melt from primary microinclusions of metallurgical grade
silicon. Secondary microinclusions are smaller (to 1 micron) and contain not more than three metal elements.

Keywords: Multicrystalline silicon, impurities, electron probe microanalysis