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MORPHOLOGICAL AND STRUCTURAL CHARACTERIZATION OF THIN LAYERS OF TIN COATED ON THE SILICON SUBSTRATE

S. Constantinescu
Thursday 11 October 2018 by Libadmin2018

ABSTRACT

Morphological and structural characterisations were carried out on the layers of TiN
lodged on the silicon substrate with orientation (100). The analysis of the crystalline
structure of TiN films was performed by X-ray diffraction (XRD), using a
diffractometer high resolution, using radiation Mo Kα . The Atomic Force Microscopy
Analysis (AFM) has followed the assessment of the influence of important parameters
of the filing process (temperature, polarity of the substrate) on the surface morphology
and the roughness of TiN films. The bulge test was first conducted on the silicon nitride
films to determine its proper residual stress and Young, s modulus which were found to
be σi = 228 + 15 MPa and E = 226 + 10 GPa , respectively. Finally, using a simple rule
of mixture formula ,the elastic mechanical properties of TiN coatings were determined .
Both the Young, s modulus and residual stress showed increasing values with bias
voltage, nitrogen to titanium ratio, and coating density. Scanning electron microscopy of
cross sectioned samples showed that coating growth occurs by formation of equiaxial
crystallites, which leads to columnar morphology beyond a thickness of 3 – 10 μm .
The columns are nearly perpendicular to the film surface .

Keywords: thickness, silicon substrate, TiN films, roughness, equiaxial crystallites


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